Chemical Vapor Deposition

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City Chemical LLC offers the best prices and highest purity of Chemical Vapor Deposition (CVD) used by today's leading global semiconductor and electronic industry.

Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. In a typical CVD process, the wafer (substrate) is exposed to one or more volatile precursors, which react on the substrate surface to produce the desired deposit.

Benzyltrichlorosilane

770-10-5 C₇H₇CI₃Si MW 225.57 Colorless to light-brown liquid, boiling point 213 °C. Uses: Electronic and semiconductor chemistry.

Cyclopentadienyltrimethylsilane

3559-74-8 C₈H₁₄S MW 138.28 Colorless liquid, boiling point 138 - 140 °C. Moisture sensitive: stable but reacts violently with water.

Diethylsilane

542-91-6 C₄HIOSi MW 88.22 Clear, colorless liquid, boiling point 56 °C. Uses: To grow thin films SiO₂, SiC by CVD, ALD.

Hexachlorodisilane

13465-77-5 Cl₆Si₂ MW 268.89 Clear colorless liquid. Synonym: HCDS. Stable, but reacts violently with water. Used in the semiconductor industry for manufacturing flash memory chips; wafer thin layers are achieved by chemical vapor deposition of HCDS.

Hexachlorodisiloxane

14986-21-1 Cl₃SiOSiCl₃ MW 284.89 Clear liquid, boiling point 137 °C. Moisture sensitive, may be shock sensitive. Uses: Chemical vapor deposition and electronics.

Hexamethyldisilane

1450-14-2 C₆H₁₈Si₂ MW 146.40 Clear colorless liquid. Synonym: HMD. Melting point 9 - 12 °C, boiling point 112 - 114 °C. Uses: Electronic and semiconductor industries.

Silicon acetate

562-90-3Si(OCOCH₃)₄ MW 264.23 White crystalline powder. Synonym: Silicon tetraacetate. Uses: Electronic and semiconductor industries.

Silicon iodide

13465-84-4 SiI₄ MW 535.68 Synonym: Silicon (IV) iodide. Melting point 120.5 °C. Uses: To grow thin films of Silicon (Si) by CVD.

Silcon tetrabromide

7789-66-4 SiBr₄ MW 347.68 Synonym: Silicon (IV) bromide. Colorless liquid with a noticeable stench. Uses: To grow thin films of Silicon (Si) by CVD.

Tetraallylsilane

1112-66-9 (H₂C=CHCH₂)₄Si MW 192.38 Synonym: Tetra(2-propenyl)silane. Clear, colorless liquid. Uses: In the synthesis of dendrimers.

Tetraethylsilane

631-36-7 C₈H₂₀Si MW 144.33 Clear, colorless liquid, melting point -82.5 °C, boiling point 153 - 154 °C. Uses: Electronic and semiconductor industries.

Tetrakis(diethylamino)titanium

4419-47-0 C₁₆H₄₀N₄Ti MW 336.40 Liquid, boiling point 112 °C, flash point -28.8 °C - closed cup. Uses: Precursor to Titanium nitride (TiN) thin films, chemical vapor deposition (CVD).

Tetrakis(diethylamino)zirconium

13801-49-5 [(C₂H₅)₂N]₄Zr MW 379.74 Liquid, boiling point 128 °C, flash point 128 °C - closed cup. Store between 2 and 8 °C, never allow to come in contact with water during storage.

Tetrakis(dimethylamino)titanium

4419-47-0 C₈H₂₄N₄Ti MW 224.20 Liquid, boiling point 50 °C, density 0.947 g/mL at 25 °C. Synonyms: Tetrakis(dimethylamido)titanium or TDMAT.

Tetrakis(dimethylamino)zirconium

19756-04-8 C₈H₂₄Zr MW 267.53 Light, yellow crystalline solid. Melting point 57 - 60 °C. Synonym: Tetrakis(dimethylamido)zirconium(IV). Uses: Deposition of zirconium oxide.

Tributylsilane

998-41-4 (C₄H₉)₃SiH MW 199.42 Liquid, boiling point 225 - 226 °C. Uses: Electronic and semiconductor industries.

Triethylsilane

617-86-7 (C₂H₅)₃SiH MW 116.28 Clear, colorless liquid. Boiling point 107 - 108 °C, soluble in water. Uses: With TFA in ionic hydrogenation as an alternative to catalytic hydrogenation, and in the semiconductor industry.

Trisilylamine

13862-16-3 H₉NSi₃ MW 107.34 Synonym: Silanamine

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