Chemical Vapor Deposition
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City Chemical LLC offers the best prices and highest purity of Chemical Vapor Deposition (CVD) used by today's leading global semiconductor and electronic industry.
Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. In a typical CVD process, the wafer (substrate) is exposed to one or more volatile precursors, which react on the substrate surface to produce the desired deposit.
770-10-5 C7H7CI3Si MW 225.57 Colorless to light-brown liquid, boiling point 213 °C. Uses: Electronic and semiconductor chemistry.
3559-74-8 C8H14S MW 138.28 Colorless liquid, boiling point 138 - 140 °C. Moisture sensitive: stable but reacts violently with water.
542-91-6 C4HIOSi MW 88.22 Clear, colorless liquid, boiling point 56 °C. Uses: To grow thin films SiO2, SiC by CVD, ALD.
13465-77-5 Cl6Si2 MW 268.89 Clear colorless liquid. Synonym: HCDS. Stable, but reacts violently with water. Used in the semiconductor industry for manufacturing flash memory chips; wafer thin layers are achieved by chemical vapor deposition of HCDS.
14986-21-1 Cl3SiOSiCl3 MW 284.89 Clear liquid, boiling point 137 °C. Moisture sensitive, may be shock sensitive. Uses: Chemical vapor deposition and electronics.
1450-14-2 C6H18Si2 MW 146.40 Clear colorless liquid. Synonym: HMD. Melting point 9 - 12 °C, boiling point 112 - 114 °C. Uses: Electronic and semiconductor industries.
562-90-3Si(OCOCH3)4 MW 264.23 White crystalline powder. Synonym: Silicon tetraacetate. Uses: Electronic and semiconductor industries.
13465-84-4 SiI4 MW 535.68 Synonym: Silicon (IV) iodide. Melting point 120.5 °C. Uses: To grow thin films of Silicon (Si) by CVD.
7789-66-4 SiBr4 MW 347.68 Synonym: Silicon (IV) bromide. Colorless liquid with a noticeable stench. Uses: To grow thin films of Silicon (Si) by CVD.
1112-66-9 (H2C=CHCH2)4Si MW 192.38 Synonym: Tetra(2-propenyl)silane. Clear, colorless liquid. Uses: In the synthesis of dendrimers.
631-36-7 C8H20Si MW 144.33 Clear, colorless liquid, melting point -82.5 °C, boiling point 153 - 154 °C. Uses: Electronic and semiconductor industries.
4419-47-0 C16H40N4Ti MW 336.40 Liquid, boiling point 112 °C, flash point -28.8 °C - closed cup. Uses: Precursor to Titanium nitride (TiN) thin films, chemical vapor deposition (CVD).
13801-49-5 [(C2H5)2N]4Zr MW 379.74 Liquid, boiling point 128 °C, flash point 128 °C - closed cup. Store between 2 and 8 °C, never allow to come in contact with water during storage.
4419-47-0 C8H24N4Ti MW 224.20 Liquid, boiling point 50 °C, density 0.947 g/mL at 25 °C. Synonyms: Tetrakis(dimethylamido)titanium or TDMAT.
19756-04-8 C8H24Zr MW 267.53 Light, yellow crystalline solid. Melting point 57 - 60 °C. Synonym: Tetrakis(dimethylamido)zirconium(IV). Uses: Deposition of zirconium oxide.
998-41-4 (C4H9)3SiH MW 199.42 Liquid, boiling point 225 - 226 °C. Uses: Electronic and semiconductor industries.
617-86-7 (C2H5)3SiH MW 116.28 Clear, colorless liquid. Boiling point 107 - 108 °C, soluble in water. Uses: With TFA in ionic hydrogenation as an alternative to catalytic hydrogenation, and in the semiconductor industry.
13862-16-3 H9NSi3 MW 107.34 Synonym: Silanamine
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