Chemical Vapor DepositionChemical Vapor Deposition

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City Chemical offers the best prices and highest purity of Chemical Vapor Deposition (CVD) used by today's leading global semiconductor and electronic industry.

Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. In a typical CVD process, the wafer (substrate) is exposed to one or more volatile precursors, which react on the substrate surface to produce the desired deposit.

Benzyltrichlorosilane

770-10-5 C7H7CI3Si MW 225.57

Cyclopentadienyltrimethylsilane

3559-74-8 C8H14S FW 138.28, Moisture sensitive.

Diethylsilane

542-91-6 C4HIOSi MW 88.2

Hexachlorodisilane

13465-77-5 CI6Si2 MW 268.89 Clear colorless liquid. Synonym: HCDS Stable, but reacts violently with water. Moisture sensitive. May be shock sensitive. Incompatible with water, moisture, acids, strong bases, oxidizing agents, alcohols.

Hexamethyldisilane

1450-14-2 C6HI8Si2 MW 146.40 Clear colorless liquid. Synonym: HMD

Silicon acetate

562-90-3 C8H12O8Si MW 264.26 Synonyms: Silicon tetraacetate, Tetraacetoxysilane.

Silicon Iodide

13465-84-4 Sil4 FW 535.68 Synonym: Silicon (IV) iodide.

Silcon tetrabromide

7789-66-4 SiBr4 FW 347.68 Synonym: Silicon (IV) bromide.

Tetraallylsilane

1112-66-9 H2C=CH-CH24Si FW 192.38

Tetraethylsilane

631-36-7 C8H20Si FW 144.33

Tributylsilane

998-41-4 C4H93SiH FW 199.42

Triethylsilane

617-86-7 C2H53SiH FW 116.28

Trisilylamine

13862-16-3 H9NSi3 MW 107.34 Synonym: Silanamine

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